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Omnipolar Hall Switch

HS479 non-polarity low power consumption high sensitivity Hall chip

HS479 is an omnipolar Hall effect sensor based on mixed-signal CMOS technology. This IC uses advanced chopper stabilization technology to provide accurate and stable magnetic switch points.

In terms of circuit design, HS479 provides an embedded controlled clock mechanism to provide clock source for Hall devices and analog signal processing circuits. At the same time, this controlled clock mechanism can send control signals to make the circuits with large current consumption periodically enter "sleep" mode; through this mechanism, the chip is periodically "woken up" and detects the strength of the magnetic field passing through the Hall device according to the predetermined magnetic field strength threshold. If the magnetic flux density is higher than the "operating point" threshold or lower than the "release point" threshold, the open-drain output transistor is driven and latched into the corresponding state. During the "sleep" cycle, the output transistor is locked in the previous state. In battery-powered applications, this design provides the best support for extending the working life.

The output transistor of HS479 will be locked in the open (BOP) state when there is a certain strong south or north magnetic field on the side facing the package marking, and locked in the closed (BRP) state when there is no magnetic field.

  • Product Detail

HS479 is an omnipolar Hall effect sensor based on mixed-signal CMOS technology. This IC uses advanced chopper stabilization technology to provide accurate and stable magnetic switch points.

In terms of circuit design, HS479 provides an embedded controlled clock mechanism to provide clock source for Hall devices and analog signal processing circuits. At the same time, this controlled clock mechanism can send control signals to make the circuits with large current consumption periodically enter "sleep" mode; through this mechanism, the chip is periodically "woken up" and detects the strength of the magnetic field passing through the Hall device according to the predetermined magnetic field strength threshold. If the magnetic flux density is higher than the "operating point" threshold or lower than the "release point" threshold, the open-drain output transistor is driven and latched into the corresponding state. During the "sleep" cycle, the output transistor is locked in the previous state. In battery-powered applications, this design provides the best support for extending the working life.

The output transistor of HS479 will be locked in the open (BOP) state when there is a certain strong south or north magnetic field on the side facing the package marking, and locked in the closed (BRP) state when there is no magnetic field.



Product features

1. Micropower battery powered applications
2. Omnipolar output switch
3. Operating voltage can be as low as 2.4V
4. High sensitivity direct reed switch replacement
5. CMOS output


Main applications

1. Solid-state switch
2. Reminder switch for cordless mobile phones
3. Screen saver switch for flip-top mobile phones
4. Magnetic sensor switch with low duty cycle to replace reed tubes

Product parameters

上一個:HS475 omnipolar Hall switch original supply

下一個:HS481 omnipolar low power Hall switch

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